基于视觉辐条图案识别方法的蓝宝石引晶机制研究

工业生产蓝宝石晶体过程中,引晶步骤有着至关重要的地位。引晶必须在温度梯度较小,温度分布趋于稳定的条件下进行。目前,工业生产蓝宝石主要依靠人工经验操控籽晶杆实现引晶操作,但是人工引晶操作的准确性不高会导致成品品质不佳、资源浪费。为此,本文提出一种基于蓝宝石视觉辐条图案识别方法来检测蓝宝石熔体状态自由液面状态,从而实现一种高效率引晶的机制。此方法利用经典骨架化算法细化辐条图案,Harris算子实现特征信息的提取,提取的特征信息放入运动轨迹模型中判断熔体稳定性,分析液面温度分布稳定性从而实现引晶。结果表明,此算法具有有效性,蓝宝石晶体引晶效率大大提高,生产出的成品良率也有提升,可有效指导蓝宝石的工业生产。     

不同补贴对象下闭环供应链信息共享价值研究

在一个制造商和一个零售商组成的二级闭环供应链中,为研究政府补贴下供应链需求信息共享对决策的影响及共享价值,针对两种补贴对象,构建并求解无信息共享和信息共享博弈模型,并进行仿真验证.研究表明:1)两种补贴对象下,制造商均能从信息共享中获益,零售商仅在绿色成本和回收成本较低时才会从信息共享中获益;绿色成本和回收成本稍高时,设计基于谈判势力的信息补偿机制能有效促进零售商共享信息.2)产品绿色度和回收率随预测需求量的提高而提高,批发价和零售价仅在回收成本较低时,才会随预测需求量的提高而提高.3)在仅补贴一方情况下,当补贴对象为低补贴一方时,两个主体所获的信息共享价值大;若对两者的补贴均较低,两个主体均希望补贴对象为零售商;若对两者的补贴均较高,零售商不愿共享需求信息.     

Terahertz generation in quantum cascade structures by two-color deriving fields: An approach to reach inversion population via optical pumping

In this paper, a quantum cascade laser (QCL) design is proposed based on GaAs/AlGaAs material system, which simultaneously operates at three widely separated wavelengths (${\lambda }_1=11.1\mu m,{\lambda }_2=14.1\mu m$ and ${\lambda }_{THz}=60\mu m$). In the design, all the wavelength radiations are achieved by the engineering of the electronic spectrum via the quantum-well widths and the applied electric field in a single active region within a same waveguide. The mid-infrared (mid-IR) wavelengths are obtained by adoption a dual-upper-state active region, and the proposed design aims to use both the mid-IR radiations as the coherent deriving fields to populate the upper THz lasing state to aid the THz-laser population inversion via optical pumping instead of direct electrical injection. A detailed analysis of electronic transport in the structure is carried out using a multi-level rate-equation model. The results show that the proposed structure offers an alternative approach to room temperature THz generation in QCLs.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Growth and characterization of two-dimensional crystals for communication and energy applications

This review article covers the growth and characterization of two-dimensional (2D) crystals of transition metal chalcogenides, h-BN, graphene, etc. The chemical vapor transport method for bulk single crystal growth is discussed in detail. Top-down methods like mechanical and liquid exfoliation and bottom-up methods like chemical vapor deposition and molecular beam epitaxy for mono/few-layer growth are described. The optimal characterization techniques such as optical, atomic force, scanning electron, and Raman spectroscopy for identification of mono/few-layer(s) of the 2D crystals are discussed. In addition, a survey was done for the application of 2D crystals for both creation and deterministic transfer of single-photon sources and photovoltaic systems. Finally, the application of plasmonic nanoantenna was proposed for enhanced solar-to-electrical energy conversion and faster/brighter quantum communication devices.     

政府监管下的医院医疗信息分享演化博弈分析

在分析政府监管下医院间医疗信息分享特征的基础上,结合我国当前正在推行的医联体医院间信息分享运作模式,引入梅特卡夫定律并考虑患者评价的影响,分析了监管部门与医院各自的利益组成,建立了监管部门与医院两者之间的演化博弈模型,并采用复制动态方程研究了不同情形下医院间信息分享的演化博弈轨迹。研究表明,政府通过监管并建立激励惩罚机制等引导措施对医院最终达到的演化稳定态具有极大影响;降低医院主体信息分享的风险成本、规范提高医院分享信息的质量、引导患者增强对医院信息分享的关注、制定有吸引力和威慑力的奖惩政策,是促进医院医疗信息分享的关键。研究结果可为政府监管部门预测医院间的信息分享趋势和制定精准化政策以促进分享提供参考。